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US 11,685,650 B2Granted
Microelectromechanical structure with bonded cover
AssigneeSiTime Corporation
InventorsAaron Partridge, Markus Lutz, Pavan Gupta
Life of this patent
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Abstract
A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
Claims22
An integrated circuit device comprising:
- a first substrate;
- a second substrate bonded relative to the first substrate, such that a chamber is defined therebetween;
- a microelectromechanical system (MEMS) structure free to move within the chamber;
- and
- an electrical pathway extending between an exterior surface of the integrated circuit device and the chamber, the electrical pathway to convey at least one of a signal to stimulate the MEMS structure to move or a signal dependent on sensed motion of the MEMS structure;
- wherein the MEMS structure and the electrical pathway each comprise respective, doped portions of a common semiconductor layer between the first substrate and the second substrate.
3 more elements
A method of fabricating an integrated circuit device, the method comprising:
- bonding one of a first substrate and a second substrate relative to a second of the first substrate and the second substrate, such that a chamber is defined therebetween;
- forming a microelectromechanical system (MEMS) structure, in a manner such that the MEMS structure will be free to move within the chamber following said bonding;
- and
- forming an electrical pathway so as to extend between an exterior surface of the integrated circuit device and the chamber, wherein the electrical pathway is to convey at least one of a signal to stimulate the MEMS structure to move or a signal dependent on sensed motion of the MEMS structure;
- wherein forming the MEMS structure and forming the electrical pathway comprises forming respective, doped portions of a common semiconductor layer between the first substrate and the second substrate.
2 more elements
Dependencies are inferred from the claim text.