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US 11,685,648 B2Granted
MEMS packages and methods of manufacture thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Kuo-Chung Yee
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Abstract
Microelectromechanical systems (MEMS) packages and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a MEMS package may include attaching a MEMS structure having a capping structure thereon to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.
Claims20
A method comprising:
- bonding a capping structure to a microelectromechanical systems (MEMS) device to form a MEMS structure using one or more inter-device connectors, the one or more inter-device connectors comprising a eutectic material, the capping structure having a cavity disposed in a surface thereof, wherein a width of the cavity is equal to a distance between inner surfaces of the one or more inter-device connectors;
- attaching the MEMS structure to a first surface of a device substrate by an adhesive layer;
- forming a plurality of wire bonds coupling the capping structure to the MEMS device and coupling the MEMS device to the device substrate;
- encapsulating the plurality of wire bonds and MEMS structure in a first molding compound;
- thinning the device substrate at a second surface of the device substrate, the thinning exposing a first through-via in the device substrate;
- forming a first redistribution structure at the second surface of the device substrate, the first redistribution structure electrically coupling the MEMS structure to first contact pads;
- attaching a device die to the first redistribution structure, wherein the first redistribution structure electrically couples the device die to the MEMS structure;
- and
- thereafter, singulating the device substrate and MEMS structure to form a MEMS package.
6 more elements
A method comprising:
- forming a microelectromechanical systems (MEMS) structure, wherein forming the MEMS structure comprises:
- fusion bonding a capping structure to a MEMS wafer;
- and
- bonding a device wafer to the MEMS wafer using a plurality of inter-wafer connectors, the inter-wafer connectors comprising a eutectic material, wherein a peripheral edge of a first inter-wafer connector of the inter-wafer connectors is aligned with a sidewall of the device wafer and a sidewall of the MEMS wafer;
- attaching a device substrate to the device wafer of the MEMS structure with an adhesive layer, the device substrate comprising a plurality of first devices formed therein;
- forming a via over the device wafer of the MEMS structure adjacent the device substrate;
- forming an encapsulant surrounding sidewalls of the via, the device substrate, and the adhesive layer;
- and
- forming a redistribution layer over the encapsulant, the via, and the device substrate, wherein the via is electrically coupled to the plurality of first devices through the redistribution layer.
6 more elements
A method comprising:
- forming a cavity in a capping structure;
- bonding a microelectromechanical systems (MEMS) device to the capping structure, wherein the MEMs device has a first lateral extent, wherein the capping structure has a second lateral extent, and wherein the first lateral extent is smaller than the second lateral extent;
- and
- providing a device wafer, wherein the device wafer comprises a device substrate, a first device formed in the device substrate, and a dielectric layer over a first surface of the device substrate, the dielectric layer comprising an opening exposing an underlying metal layer of the device wafer;
- aligning the opening with a standoff structure of the MEMS device;
- and
- bonding the device wafer to the MEMS device using an inter-device connector, wherein the inter-device connector hermetically seals the cavity of the capping structure, wherein after bonding the device wafer to the MEMS device, a thickness of the inter-device connector in a first direction perpendicular to a major surface of the device substrate is equal to a thickness of the dielectric layer in the first direction.
4 more elements
Dependencies are inferred from the claim text.