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US 11,684,949 B2Granted
CMOS ultrasonic transducers and related apparatus and methods
AssigneeBfly Operations, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
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Abstract
CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
Claims10
An ultrasound transducer device, comprising:
- a first silicon substrate;
- a second silicon substrate fusion-bonded to the first silicon substrate with a gap between the first silicon substrate and the second silicon substrate;
- a first conductive layer formed on the first silicon substrate;
- a second conductive layer formed on the first conductive layer;
- and
- a layer of silicon dioxide formed on the second conductive layer such that the second conductive layer is disposed between the first conductive layer and the layer of silicon dioxide.
3 more elements
Dependencies are inferred from the claim text.