Vertical insulated gate bipolar transistor (IGBT) with two type control gates

A semiconductor device, comprising:

• a first conductive member;
• a second conductive member;
• a first electrode including a first electrode region and a second electrode region, a first direction from the first electrode region toward the first conductive member crossing a second direction from the first electrode region toward the second electrode region, a direction from the second electrode region toward the second conductive member being along the first direction;
• a first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region, the first semiconductor region being of a first conductivity type, the first partial region being between the first electrode region and the first conductive member, the second partial region being between the second electrode region and the second conductive member, the third partial region being between the first partial region and the second partial region in the second direction, the third partial region being between the first electrode and the fourth partial region in the first direction, the fourth partial region being between the first conductive member and the second conductive member;
• a second semiconductor region including a first semiconductor film portion, the second semiconductor region being of the first conductivity type, the fourth partial region being between the third partial region and the first semiconductor film portion in the first direction;
• a third semiconductor region including a first semiconductor layer portion, the third semiconductor region being of a second conductivity type, the first semiconductor layer portion being between the fourth partial region and the first semiconductor film portion in the first direction;
• a fourth semiconductor region provided between the first electrode and the first semiconductor region, the fourth semiconductor region being of the second conductivity type;
• a fifth semiconductor region being of the second conductivity type, at least a portion of the fifth semiconductor region being provided between the first partial region and the first conductive member, the fifth semiconductor region being not provided between the second partial region and the second conductive member;
• a second electrode electrically connected to the first semiconductor film portion;
• and
• a first insulating member including a first insulating portion, a second insulating portion, a third insulating portion, a fourth insulating portion, and a sixth insulating portion, the first insulating portion being between the first partial region and the first conductive member in the first direction, the second insulating portion being between the first conductive member and the fourth partial region in the second direction, the third insulating portion being between the first conductive member and a portion of the first semiconductor layer portion in the second direction, the fourth insulating portion being between the first conductive member and an other another portion of the fourth partial region in the second direction, the fourth insulating portion being between the second insulating portion and the third insulating portion in the first direction, the sixth insulating portion being between the second partial region and the second conductive member in the first direction, the sixth insulating portion directly contacting the second partial region, a second thickness along the second direction of the second insulating portion being greater than a third thickness along the second direction of the third insulating portion, a fourth thickness along the second direction of the fourth insulating portion being greater than the third thickness.