Back to results
US 11,681,168 B2Granted
Silicon-based modulator with optimized doping profile
AssigneeCiena Corporation
InventorsAlexandre Delisle-Simard, Yves Painchaud
Life of this patent
Estimating the term…
Abstract
A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.
Claims20
A silicon-based modulator comprising:
- a waveguide including a contact region and a core region,
- wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.
A method comprising:
- forming a silicon-based modulator that includes
- a waveguide including a contact region and a core region,
- wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.
Dependencies are inferred from the claim text.