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US 11,677,016 B1Granted
TeraHertz capable integrated circuit
AssigneeAvoroses Incorporated
InventorsSammy K Brown, John D. Bryant, Thomas Brumett
Life of this patent
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Abstract
A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.
Claims11
A nano-vacuum tube transistor comprising:
- a source having a knife edge;
- a drain, wherein the drain comprises a flat surface, and wherein the flat surface is configured to provide quantum suppression of surface voltage breakdown;
- a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere;
- and wherein the flat surface of the drain is located close to the channel formed between the source and the drain;
- and
- a space charge plasma formed at the knife edge within the channel.
3 more elements
A two-wire lossless transmission line comprising:
- a first wire formed by a first space charge conductor comprising:
- a first source having a knife edge, a first drain, and a first channel formed between the source and the drain, the first channel having a width to provide a pseudo-vacuum in a normal atmosphere, the first space charge conductor forming a space charge plasma at the knife edge within the first channel;
- a second wire formed by a second space charge conductor, the second wire providing a return path;
- wherein the space charge plasma has a bandwidth of a plasma frequency of the space charge, between 2 THz and 4 THz.
1 more element
Dependencies are inferred from the claim text.