PIN photodetector
AssigneeAttollo Engineering, LLC
InventorsJonathan Geske, Andrew Hood, Michael MacDougal
Life of this patent
Estimating the term…
Abstract
A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.
Claims19
A PIN photodetector comprising:
- a first semiconductor layer;
- a second semiconductor cap layer;
- an array of semiconductor regions located within the second semiconductor cap layer, wherein each of the semiconductor regions in the array are separated from one another by approximately the same distance d1;
- an absorber layer located between the first semiconductor layer and the second semiconductor cap layer including the of semiconductor regions;
- and
- wherein one or more electrical responses are generated by the array of semiconductor regions in response to light incident to the PIN photodetector.
An optical detection system comprising:
- a PIN photodetector comprising:
- an n-type semiconductor layer;
- an n-type semiconductor cap layer;
- a plurality of p-type diffusion regions diffused within the n-type semiconductor cap layer and separated from one another by a distance d1, the plurality of p-type diffusion regions arranged in a two-dimensional array of p-type diffusion regions;
- an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer, wherein the plurality of p-type diffusion regions generate a plurality of depletion regions within the absorber layer, wherein each of the depletion regions are separated from adjacent depletion regions by a distance d3;
- and
- a signal conditioning circuit connected to receive an electrical response generated by the PIN photodetector, wherein the signal conditioning circuit is characterized by a bandwidth.
Dependencies are inferred from the claim text.