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US 11,676,920 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsDa-Jun Lin, Bin-Siang Tsai, Fu-Yu Tsai
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Abstract
A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.
Claims5
A semiconductor device, comprising:
- an aluminum (Al) pad on a substrate;
- a wire bonded onto the Al pad, wherein the wire comprises a copper (Cu) wire and a palladium (Pd) layer coated on the Cu wire;
- a cobalt (Co) layer between and directly contacting the Al pad and the wire;
- and
- a Co—Pd alloy on and directly contacting the Al pad and under the wire.
2 more elements
Dependencies are inferred from the claim text.