Solar cell apparatus and method for forming the same for single, tandem and heterojunction systems
AssigneeSun Company, Inc.
InventorsAnna Battaglia, Cosimo Gerardi, Giuseppe Condorelli, Andrea Canino
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Abstract
A solar cell apparatus 100 and a method for forming said solar cell apparatus 100, comprising a substrate 101, a n-type transparent conductive oxide (TCO) layer 102 deposited atop said substrate 101, a p-i-n structure 200 that includes a p-type layer 103, an i-type layer 104, a n-type layer 105, a metal back layer 106 deposited atop said n-type layer 105 of the p-i-n structure 200. The n-type layer 105 comprises n-type donors 115 including phosphorus atoms. The n-type donors 115 include oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the n-type layer 105.
Claims8
A heterojunction solar cell apparatus comprising:
- a substrate,
- a p-i-n structure disposed on the substrate, the structure comprising
- a heterojunction p-type amorphous layer arranged on
- a heterojunction first i-type amorphous layer arranged on
- a heterojunction first n-type crystalline layer arranged on
- a heterojunction second i-type amorphous layer arranged on
- a heterojunction second n-type crystalline layer,
- wherein the heterojunction second n-type layer comprises an oxygen-rich amorphous silicon phase, comprising heterojunction n-type donors including phosphorus atoms, wherein the heterojunction n-type donors comprise oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the n-type layer, and wherein the heterojunction n-type donors comprise phosphorus atoms at an atomic concentration between 1% and 4% of the overall atomic composition of the heterojunction n-type layer.
A method for forming of a heterojunction solar cell apparatus comprising:
- depositing a n-type transparent conductive oxide on a substrate;
- forming a p-i-n heterojunction structure including
- depositing a heterojunction p-type amorphous layer on said n-type transparent conductive oxide;
- depositing a heterojunction first i-type amorphous layer on said heterojunction p-type amorphous layer;
- depositing a heterojunction first n-type crystalline layer on said heterojunction first i-type amorphous layer;
- depositing a heterojunction second i-type amorphous layer on said heterojunction first n-type crystalline layer;
- depositing a heterojunction second n-type crystalline layer on said heterojunction second i-type amorphous layer;
- wherein depositing said heterojunction second n-type layer comprised in said p-i-n heterojunction structure includes depositing n-type donors including phosphorus and oxygen atoms having said oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the heterojunction second n-type layer, wherein the n-type donors comprise phosphorus atoms at an atomic concentration comprised between 1% and 4% of the overall atomic composition of the heterojunction second n-type layer;
- and, wherein the heterojunction second n-type layer comprises an oxygen-rich amorphous silicon phase.
Dependencies are inferred from the claim text.