Synthesis and use of precursors for vapor deposition of tungsten containing thin films
AssigneeASM IP Holding B.V.
InventorsTimo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
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Abstract
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Claims7
A compound having the formula WL4, wherein W has an oxidation state of +IV, and L is a beta-diketonato ligand, wherein L comprises 2,2,6,6-tetramethyl-3,5-heptanedionato (thd).
A compound having the formula WL4, wherein W has an oxidation state of +IV, and wherein L comprises 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato (fod).
A vapor deposition reactant comprising a tungsten compound having the formula WL4, wherein W has an oxidation state of +IV and L is a beta-diketonato ligand, and wherein L comprises a 2,2,6,6-tetramethyl-3,5-heptanedionato (thd) ligand or a 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato (fod) ligand.
Dependencies are inferred from the claim text.