Semiconductor light detection element
AssigneeHamamatsu Photonics K.K.
InventorsKazuto Ofuji, Masashi Ito, Katsumi Shibayama, Akira Sakamoto
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Abstract
Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.
Claims9
A semiconductor light detection element comprising:
- a semiconductor portion having a front surface including a light reception region that receives incident light and configured to photoelectrically convert the incident light incident on the light reception region;
- a metal portion provided on the front surface;
- and
- a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes,
- wherein the carbon nanotube film includes a main portion provided on the light reception region, an extending-over portion provided on an upper surface of the metal portion, and a rising portion connecting the main portion and the extending-over portion with each other,
- a thickness of the rising portion in a direction along the front surface is larger than a thickness of the main portion in a direction perpendicular to the front surface, and
- the thickness of the rising portion on the main portion side is larger than the thickness of the rising portion on the extending-over portion side.
Dependencies are inferred from the claim text.