Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsueh-Chih Chou, Chia Hao Tu, Sang Hoo Dhong, Lee-Chung Lu, Li-Chun Tien, Ting-Wei Chiang, Hui-Zhong Zhuang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.
Claims20
A semiconductor structure, comprising:
- first standard cell having a cell width along a first direction and a cell height along a second direction, the first standard cell including a plurality of gate strips arranged therein;
- and
- a second standard cell having a cell width along the first direction and a cell height along the second direction, the second standard cell including a plurality of gate strips arranged therein;
- wherein the cell height of the first standard cell is substantially different from the cell height of the second standard cell;
- and
- wherein the cell width of the first standard cell is determined according to a number of the gate strips arranged in the first standard cell, and the cell width of the second standard cell is determined according to a number of the gate strips arranged in the second standard cell.
A semiconductor standard cell structure, comprising:
- an n-type active region and a p-type active region side by side disposed along a first direction;
- and
- a plurality of gate strips extending from a bottom to a top of the semiconductor standard cell structure along a second direction perpendicular to the first direction;
- wherein the n-type active region includes a plurality of first fin structures thereon along the first direction, and the p-type active region comprises a plurality of second fin structures thereon along the first direction, and a number of the first fin structures is different from a number of the second fin structures.
A semiconductor structure, comprising:
- a first standard cell including:
- an n-type active region and a p-type active region side by side disposed along a first direction;
- a plurality of gate strips extending from a bottom to a top of the first standard cell along a second direction perpendicular to the first direction;
- and
- a reserved region for metal routing;
- and
- a second standard cell including:
- an n-type active region and a p-type active region side by side disposed along the first direction;
- a plurality of gate strips extending from a bottom to a top of the second standard cell along the second direction;
- and
- a reserved region for metal routing, and a height of the reserved region of the first standard cell is the same as a height of the reserved region of the second standard cell;
- wherein a height of the n-type active region of the first standard cell is different from a height of the n-type active region of the second standard cell.
Dependencies are inferred from the claim text.