Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes

A semiconductor device comprising:

• a semiconductor substrate;
• a plurality of first bipolar transistors on a first primary surface side of the semiconductor substrate;
• at least one second bipolar transistor on the first primary surface side of the semiconductor substrate;
• and
• a first bump stretching over the plurality of first bipolar transistors and the at least one second bipolar transistor,
• wherein
• the at least one second bipolar transistor is a plurality of second bipolar transistors;
• the plurality of first bipolar transistors and the plurality of second bipolar transistors alternate in a direction parallel to the first primary surface of the semiconductor substrate;
• the plurality of first bipolar transistors have a first height between a bottom surface of the semiconductor substrate of the plurality of first bipolar transistors and a top of the first bump in a direction perpendicular to the first primary surface;
• the plurality of second bipolar transistors have a second height between a bottom surface of the semiconductor substrate of the plurality of second bipolar transistor and the top of the first bump in the direction perpendicular to the first primary surface;
• the second height is greater than the first height;
• base electrodes of the plurality of first bipolar transistors are each electrically coupled to shared first base wiring, and collector electrodes of the plurality of first bipolar transistors are each electrically coupled to shared first collector wiring;
• and
• base electrodes of the plurality of second bipolar transistors are each electrically coupled to shared second base wiring, and collector electrodes of the plurality of second bipolar transistors are each electrically coupled to shared second collector wiring.