Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

A method of manufacturing a semiconductor device, the method comprising:

• forming a substrate material having a stacked structure including a first insulating film layer located on a specific semiconductor substrate, a first semiconductor layer located on the first insulating film layer, a second insulating film layer located on the first semiconductor layer, and a second semiconductor layer located on the second insulating film layer, the stacked structure being device-isolated;
• doping the first semiconductor layer in the substrate material to form an electromagnetic shield layer electrically separated from the specific semiconductor substrate;
• and
• forming a plurality of elements using the second semiconductor layer, wherein a first element of the plurality of elements is electrically connected to a second element of the plurality of elements.

An electronic apparatus, comprising:

• a semiconductor device including
• a circuit substrate including
• an insulating film layer located above a specific semiconductor substrate and
• a semiconductor layer located above the insulating film layer,
• a plurality of elements on the circuit substrate, wherein a first element of the plurality of elements is electrically connected with a second element of the plurality of elements, and
• an electromagnetic shield layer in the insulating film layer corresponding to a portion of the circuit substrate, wherein
• at least one element of the plurality of elements is in the portion,
• the electromagnetic shield layer is electrically separated from the specific semiconductor substrate,
• the specific semiconductor substrate is connected to a global ground and the electromagnetic shield layer is connected to a local ground, and
• a doping concentration of the electromagnetic shield layer is equal to or less than 1016 cm−3.