Method and device for measuring dimension of semiconductor structure

An apparatus for measuring dimension of a semiconductor structure, comprising:

• a memory for storing computer-executable instructions;
• and
• at least one processor configured to execute the computer-executable instructions to perform operations of:
• controlling a probe of an Atomic Force Microscope (AFM) to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured;
• controlling the probe to scan the top surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, and detecting amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured;
• and
• determining a Critical Dimension (CD) of the semiconductor structure to be measured according to the amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured;
• wherein the amplitudes of the probe are extents of oscillations of the probe.

A non-transitory computer-readable storage medium having stored computer-executable instructions that when executed, implement a method for measuring dimension of a semiconductor structure, the method comprising:

• controlling a probe of an Atomic Force Microscope (AFM) to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured;
• controlling the probe to scan the top surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, and detecting amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured;
• and
• determining a Critical Dimension (CD) of the semiconductor structure to be measured according to the amplitudes of the probe at respective scanning points on the top surface of the semiconductor structure to be measured;
• wherein the amplitudes of the probe are extents of oscillations of the probe.