Using sacrificial polymer materials in semiconductor processing
AssigneeMicron Technology, Inc.
InventorsMichael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
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Abstract
In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
Claims20
A semiconductor processing method, comprising:
- depositing, while preventing drying of a structure, a solvent in openings between features of the structure;
- displacing, while preventing drying of the structure, the solvent with a polymer material in the openings;
- and
- removing the polymer material from the openings by performing a plasma ashing process to the structure.
A semiconductor processing method, comprising:
- displacing a first solvent in openings between features of a structure with a polymer solution comprising a second solvent and a polymer resin;
- forming a polymer material in the openings from the polymer solution;
- and
- removing the polymer material from the openings by applying heat to the structure.
A semiconductor processing method, comprising:
- displacing liquid in openings between a plurality of features of a structure with a sacrificial polymer material;
- removing the sacrificial polymer material from the openings via a plasma ashing process;
- and
- adjusting a pressure differential of a processing chamber housing the structure to remove ash.
Dependencies are inferred from the claim text.