Method for growing vertically oriented single-walled carbon nanotubes with the same electronic properties and for reproducing single-walled carbon nanotubes with the same electronic properties

A method of reproducing at least one single-walled carbon nanotube having predefined electronic properties selected from the group consisting of a single-walled carbon nanotube having predefined electronic properties and a plurality of single-walled carbon nanotubes having the same predefined electronic properties, the method comprising the steps:

• a) preparing a dispersion from a liquid and from the at least one single-walled carbon nanotube having predefined electronic properties;
• b) forming fragments of the at least one single-walled carbon nanotube having predefined electronic properties by an energy input into the dispersion;
• c) applying the fragments from the dispersion onto a surface of a carrier selected from the group consisting of silicon oxide or glass as a starting layer for reproducing the nanotubes and, prior to nanotube reproducing, orienting the fragments on the surface during the application from the dispersion so that the surface is intersected by a longitudinal axis of the fragments and the fragments are not oriented in parallel in a plane with respect to the surface of the carrier, wherein the fragments are oriented on the surface prior to nanotube reproducing by applying and drying on the surface, under application of an electric field, a surfactant layer containing the fragments, which is formed by a surfactant comprised in the dispersion, the surfactant layer having a thickness that is less than a length of the fragments,
• such that the surfactant layer after drying completely covers the surface of the carrier, so that the fragments of the at least one single-walled carbon nanotube are applied and oriented on as well as fixed to the carrier via the surfactant layer;
• and
• d) introducing the fragments applied to, fixed, and oriented on the carrier such that the surface is intersected by a longitudinal axis of the fragments and the fragments are not oriented in parallel in a plane with respect to the surface of the carrier into an apparatus for chemical vapor deposition, chemically activating tips of the fragments by exposure to an atmosphere containing hydrogen, and then epitaxially growing single-walled carbon nanotubes having the same predefined electronic properties as the at least one single-walled carbon nanotube by the fragments being extended in the apparatus using chemical vapor deposition in a gas atmosphere containing carbon.