Short-circuit semiconductor component and method for operating same

A short-circuit semiconductor component comprising a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are successively arranged in a vertical direction starting from a rear side with a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side, with a front-side center determined by its geometric center of gravity, wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode with a lateral rear-side electrode width (WER) determined by its lateral extent, which is applied to the rear side, and the front-side base region is connected in an electrically conductive manner to a front-side electrode with a lateral front-side electrode width (WEV) determined by its lateral extent, which is applied to the front side, wherein at least one front-side turn-on structure with a lateral front-side turn-on structure width (WSV) determined by its lateral extent is embedded in the front-side base region and at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure with a lateral rear-side turn-on structure width (WSR) determined by its lateral extent is embedded in the rear-side base region and at least partially covered by the rear-side electrode, wherein each turn-on structure is configured and arranged in such a way that it is turned on depending on a predeterminable turn-on signal supplied to the semiconductor body and produces, on a one-off basis, a permanent, irreversible, electrically conductive, low-resistance connection between the front-side electrode and the rear-side electrode,

• by a ratio of the lateral front-side turn-on structure width (WSV) to the lateral front-side electrode width (WEV) being less than 1 if the front-side turn-on structure is present, and a ratio of the lateral rear-side turn-on structure width (WSR) to the lateral rear-side electrode width (WER) being less than 1 if the rear-side turn-on structure is present, wherein each turn-on structure is an emitter structure of the second conduction type, which is embedded into the front-side or rear-side base region and contacted in an electrically conductive manner with the electrode applied to the respective base region, and which can be turned on by means of at least one trigger structure which, via the semiconductor body, acts on it electrically, wherein each trigger structure can in turn be activated by means of the turn-on signal,
• characterized in that
• a sheet resistance of the base region containing the emitter structure is set in such a way that a minimum turn-on current obtained from the turn-on signal and supplied to the emitter structure has a current intensity of at least 1 A for turning on the emitter structure.