High-refractive-index hydrogenated silicon film and methods for preparing the same

A preparation method for an oxygen-containing hydrogenated silicon film, comprising:

• (a) placing a base body that is cleaned on a rotation mechanism of a vacuum sputtering reaction film coating machine, with a film coating face facing a sputter source, the rotation mechanism rotating at a constant speed in a film coating chamber;
• and
• when a vacuum degree inside the film coating chamber is higher than 10−3 Pa, starting the sputter source to work at a power 0.75-12 KW and introducing argon to deposit Si on the base body by MF magnetron Si target sputtering from the sputter source, forming a silicon film;
• (b) driving, along with the rotation of the rotation mechanism, the base body to a reaction source area;
• and starting the reaction source to work at a power of 0.5-8 KW and introducing and activating a mixture of hydrogen gas, oxygen gas, and an inert gas through RF or ICP to form plasmas consisting of hydrogen-oxygen-argon, and reacting the silicon film obtained from step (a) with the plasmas to form the oxygen-containing hydrogenated silicon film, wherein the inert gas is argon, and wherein an amount of active oxygen is 4-30% of a total amount of active hydrogen and the active oxygen by volume;
• and
• (c) annealing the oxygen-containing hydrogenated silicon film obtained from step (b) in an annealing furnace at 100-300° C. for 60-180 minutes,
• wherein the oxygen-containing hydrogenated silicon film has a refractive index of 1.46-3.7 and an extinction coefficient of less than 0.0001 over a wavelength range of 800-1100 nm after step (c).