Resistive interface material
AssigneeMicron Technology, Inc.
InventorsAndrea Gotti, Dale W. Collins, Fabio Pellizzer
Life of this patent
Estimating the term…
Abstract
Methods, systems, and devices for a resistive interface material are described. A memory device may be fabricated using a sequence of steps that include forming a stack of materials by depositing a first metal layer, depositing a first electrode layer on the metal layer, depositing a memory material on the first electrode layer to form one or more memory cells, depositing a second electrode layer on the memory material, and depositing a second metal layer on the second electrode layer. A lamina (or multiple) having a relatively high resistivity may be included in the stack of materials to reduce or eliminate a current spike that may otherwise occur across the memory cells during an access operation.
Claims25
An apparatus, comprising:
- a first metal material formed on a substrate and corresponding to a first access line;
- a memory material formed above the first metal material, wherein the memory material comprises a chalcogenide material configured as a selector material;
- an electrode material formed above the memory material;
- a lamina formed above the memory material, at least a portion of the electrode material, or both, wherein the lamina comprises an oxide material having a resistivity greater than the first metal material, the electrode material, and a second metal material;
- and
- the second metal material formed above the lamina and corresponding to a second access line.
A method, comprising:
- depositing a first metal material on a substrate to form a first metal material corresponding to a first access line;
- depositing a cell storage material above the first metal material;
- depositing an oxide material above the cell storage material to form a lamina having a greater resistivity than the first metal material, the cell storage material, an electrode material, and a second metal material;
- depositing an electrode material above the cell storage material to form at least a portion of the electrode material;
- and
- depositing a second metal material above the electrode material to form the second metal material corresponding to a second access line.
An apparatus, comprising:
- a first metal material formed on a substrate and corresponding to a first access line;
- a first electrode material formed above the first metal material;
- a lamina formed above at least a portion of the first electrode material, wherein the lamina comprises an oxide material having a greater resistivity than the first metal material and the first electrode material, the oxide material comprising aluminum oxide or hafnium oxide;
- a memory material formed above the lamina, wherein the memory material comprises a chalcogenide material configured as a selector material;
- a second electrode material formed above the memory material;
- and
- a second metal material formed above the second electrode material and corresponding to a second access line.
Dependencies are inferred from the claim text.