Self-rectifying resistive memory and fabrication method thereof

A self-rectifying resistive memory, comprising:

• a lower electrode;
• a resistive material layer formed on the lower electrode and used as a storage medium;
• a barrier layer formed on the resistive material layer and using a semiconductor material or an insulating material;
• and
• an upper electrode formed on the barrier layer to achieve Schottky contact with the material of the barrier layer;
• wherein, the Schottky contact between the upper electrode and the material of the barrier layer is used to realize self-rectification of the self-rectifying resistive memory;
• wherein, the barrier layer is a fully-matched metal oxide;
• wherein, a thickness of the material of the barrier layer is 2 nm to 5 nm, and an operation voltage between the upper electrode and the lower electrode of the self-rectifying resistive memory is less than 5V;
• and
• wherein, a material of the lower electrode is W, a material of the resistive material layer is WOx, a material of the barrier layer is HfO2, and a material of the upper electrode is Pd.