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US 11,641,782 B2Granted
Spin-orbit torque-based switching device and method of fabricating the same
AssigneeKorea University Research and Business Foundation
InventorsYoung Keun Kim, Gyu Won Kim
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Abstract
The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.
Claims9
A spin-orbit torque-based switching device, comprising:
- a spin torque generating layer provided with a tungsten-vanadium alloy thin film;
- and
- a magnetization free layer formed on the spin torque generating layer,
- wherein the spin torque generating layer comprises a tungsten thin film and the tungsten-vanadium alloy thin film formed between the tungsten thin film and the magnetization free layer.
1 more element
A method of fabricating a spin-orbit torque-based switching device, comprising:
- forming a spin torque generating layer provided with a tungsten-vanadium alloy thin film;
- and
- forming a magnetization free layer on the spin torque generating layer,
- wherein the forming of the spin torque generating layer further comprises:
- forming a tungsten thin film;
- and
- forming the tungsten-vanadium alloy thin film on the tungsten thin film.
4 more elements
Dependencies are inferred from the claim text.