Organic photoelectronic device and image sensor

An organic photoelectronic device, comprising:

• a first electrode and a second electrode facing each other;
• and
• a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,
• a first region closest to the first electrode,
• a second region closest to the second electrode, and
• a third region between the first region and the second region in a thickness direction,
• wherein the light-absorption layer includes a p-type semiconductor and an n-type semiconductor,
• wherein a composition ratio of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is continuously increased and then decreased along the thickness direction such that a maximum composition ratio of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is in the third region of the light-absorption layer, and
• wherein an amount of the n-type semiconductor in the third region is less than an amount of the n-type semiconductor in the first region and an amount of the n-type semiconductor in the second region, respectively.