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US 11,641,750 B2Granted
Image pickup element, stacked image pickup element, and solid image pickup apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorsMasahiro Joei, Kenichi Murata, Shintarou Hirata, Toshihiko Hayashi
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Abstract
An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.
Claims23
An image pickup element, comprising:
- a photoelectric conversion section including a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another,
- wherein, immediately below the photoelectric conversion layer, an oxide film and an oxide semiconductor layer are formed from a photoelectric conversion layer side, and
- wherein a value ConcH-1 of a concentration of hydrogen atoms in a portion of the oxide semiconductor layer near an interface between the oxide film and the oxide semiconductor layer is higher than a value ConcH-2 of a concentration of hydrogen atoms in a central portion of the oxide semiconductor layer along a thickness direction.
An image pickup element, comprising:
- a photoelectric conversion section including a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another,
- wherein, immediately below the photoelectric conversion layer, an oxide film and an oxide semiconductor layer are formed from a photoelectric conversion layer side, and
- wherein, assuming that ConcH-1 denotes a value of a concentration of hydrogen atoms in a portion of the oxide semiconductor layer near a n interface between the oxide film and the oxide semiconductor layer and that ConcM-1 denotes a value of a concentration of atoms included in the oxide film in the portion of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer, a n average change rate ΔConcH-1 of ConcH-1 toward a central portion along a thickness direction of the oxide semiconductor layer is larger than an average change rate ΔConcM-1 of ConcM-1 toward the central portion along the thickness direction of the oxide semiconductor layer.
Dependencies are inferred from the claim text.