Semiconductor memory device

A semiconductor memory device comprising:

• a plurality of conductor layers separated from each other in a first direction;
• and
• a first pillar, extending through the plurality of conductor layers in the first direction, that includes a first columnar portion, a second columnar portion, and a middle portion interposed between the first columnar portion and the second columnar portion,
• wherein a width of the middle portion in a second direction crossing the first direction is larger than a width of the first columnar portion in the second direction and larger than a width of the second columnar portion in the second direction,
• wherein the first columnar portion includes a first core member extending in the first direction, a first semiconductor layer provided on an outer periphery of the first core member, and a first charge storage layer provided on an outer periphery of the first semiconductor layer,
• wherein the first charge storage layer is located between the plurality of conductor layers and the first semiconductor layer,
• wherein the second columnar portion includes a second core member extending in the first direction, a second semiconductor layer provided on an outer periphery of the second core member, and a second charge storage layer provided on an outer periphery of the second semiconductor layer,
• wherein the second charge storage layer is located between the plurality of conductor layers and the second semiconductor layer,
• wherein the middle portion includes a third core member and a third semiconductor layer provided on an outer periphery of the third core member,
• wherein the first semiconductor layer is in contact with the third semiconductor layer on a first side of the third semiconductor layer,
• wherein the second semiconductor layer is in contact with the third semiconductor layer on a second side of the third semiconductor layer opposite to the first side,
• wherein the second semiconductor layer and the third semiconductor layer are formed as a continuous film,
• wherein the first core member is in contact with the third core member via the third semiconductor layer on a third side of the third core member,
• wherein the second core member is in contact with the third core member on a fourth side of the third core member opposite to the third side, and
• wherein the first charge storage layer is spaced from the second charge storage layer.