Memory device and manufacturing method thereof
AssigneeFujian Jinhua Integrated Circuit Co., Ltd.
InventorsHuixian Lai, Chao-Wei Lin, Chia-Yi Chu
Life of this patent
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Abstract
The invention provides a memory and a forming method thereof. By connecting two node contact parts filled in two node contact windows at the edge and adjacent to each other, a large-sized combined contact can be formed, so that when preparing the node contact parts, the morphology of the combined contact at the edge position can be effectively ensured, and under the blocking protection of the combined contact with a large width, the rest of the node contact parts can be prevented from being greatly eroded, and the morphology accuracy of the independently arranged node contact parts can be improved, thereby being beneficial to improving the device performance of the formed memory.
Claims20
A memory device, comprising:
- a substrate, a memory region and a peripheral region are defined thereon, the peripheral region being located outside the memory region;
- a plurality of isolation pillars formed on the substrate and at least located in the memory region for defining a plurality of node contact windows in the memory region of the substrate;
- and
- a plurality of node contacts, the plurality of node contacts fill the node contact windows and arranged in a plurality of rows, wherein no greater than two of the plurality of node contacts filled in two adjacent node contact windows are connected with each other and to form a combined contact, and a plurality of the node contacts located beside the combined contact are defined as a plurality of independent contacts, and each independent contact is filled with a node contact window, wherein all of the independent contacts and the combined contact are disposed only in the memory region.
A method for forming a memory device, comprising:
- forming a substrate, a memory region and a peripheral region are defined thereon, the peripheral region being located outside the memory region;
- forming a plurality of isolation pillars formed on the substrate and at least located in the memory region for defining a plurality of node contact windows in the memory region of the substrate;
- and
- forming a plurality of node contacts, the plurality of node contacts fill the node contact windows and arranged in a plurality of rows, wherein no greater than two of the plurality of node contacts filled in two adjacent node contact windows are connected with each other and to form a combined contact, and a plurality of the node contacts located beside the combined contact are defined as a plurality of independent contacts, and each independent contact is filled with a node contact window, wherein all of the independent contacts and the combined contact are disposed only in the memory region.
Dependencies are inferred from the claim text.