Memory structure having a hexagonal shaped bit line contact disposed on a source/drain region
AssigneeNanya Technology Corporation
InventorYu-Ying Lin
Life of this patent
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Abstract
A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.
Claims8
A memory structure, comprising:
- a first gate structure, a second gate structure, and a first source/drain region disposed in a substrate, wherein the first source/drain region is disposed between the first gate structure and the second gate structures;
- and
- a bit line contact disposed on the first source/drain region, wherein the bit line contact has a hexagonal shaped cross section profile.
Dependencies are inferred from the claim text.