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US 11,641,734 B2Granted
Method of forming a semiconductor structure having a gate structure electrically connected to a word line
AssigneeNanya Technology Corporation
InventorSzu-Yao Chang
Life of this patent
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Abstract
A method of forming a semiconductor structure includes forming a capacitor on a substrate. A recess is formed in the capacitor. A drain region is formed in the recess. A word line is formed on the drain region. A gate structure is formed on the drain region, and the gate structure is electrically connected to the word line. A first bit line is formed on the gate structure, such that the first bit line servers as a source region.
Claims6
A method of forming a semiconductor structure, comprising:
- forming a capacitor on a substrate;
- forming a recess in the capacitor;
- forming a drain region in the recess;
- forming a word line on the drain region;
- forming a gate structure on the drain region, wherein the gate structure is electrically connected to the word line;
- and
- forming a first bit line on the gate structure, such that the first bit line serves as a source region.
4 more elements
Dependencies are inferred from the claim text.