Method of manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorChia-Lin Chang
Life of this patent
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Abstract
A semiconductor includes a semiconductor substrate and pillar type capacitors. The semiconductor substrate includes first connecting pads and second connecting pads. The second connecting pads are disposed on the first connecting pads respectively, and the pillar type capacitors are disposed on the second connecting pads respectively. A first ends of the pillar type capacitors are connected to the second connecting pads respectively, and a second ends of the pillar type capacitors area at the opposite side of the first ends. The distance between the first end and the second end of each of the pillar type capacitors is from 1 micrometer to 1.8 micrometer. A manufacturing method is also provided.
Claims9
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate having a plurality of first connecting pads and a plurality of second connecting pads being disposed on the first connecting pads respectively;
- forming a plurality of insulating layers on the second connecting pads on the semiconductor substrate, wherein
- the step of forming the insulating layers comprises:
- disposing a first nitride layer;
- disposing a first insulating filling layer;
- disposing a second nitride layer;
- disposing a second insulating filling layer;
- and
- disposing a third nitride layer;
- etching the insulating layers and forming a plurality of vertical holes corresponded to the second connecting pads respectively, wherein power of the etching is from 900 W to 1100 W;
- and
- forming a pillar type capacitor in each of the vertical holes.
Dependencies are inferred from the claim text.