Image sensor and electronic apparatus
AssigneeSony Group Corporation
InventorMasashi Nakata
Life of this patent
Estimating the term…
Abstract
The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
Claims20
A light detecting device, comprising:
- a photoelectric conversion portion disposed above a semiconductor substrate;
- a photodiode disposed in the semiconductor substrate;
- a color filter disposed below the photoelectric conversion portion and disposed above the semiconductor substrate;
- an on-chip lens corresponding to the photoelectric conversion portion and the photodiode,
- wherein, in a plan view, a center of the photoelectric conversion portion is deviated from a center of the on-chip lens;
- and
- a light shield,
- wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
A light detecting apparatus, comprising:
- a lens;
- and
- a light detecting device, comprising:
- a photoelectric conversion portion disposed above a semiconductor substrate;
- a photodiode disposed in the semiconductor substrate;
- a color filter disposed below the photoelectric conversion portion and disposed above the semiconductor substrate;
- an on-chip lens corresponding to the photoelectric conversion portion and the photodiode,
- wherein, in a plan view, a center of the photoelectric conversion portion is deviated from a center of the on-chip lens;
- and
- a light shield,
- wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
A light detecting device, comprising:
- a first photoelectric conversion portion disposed above a semiconductor substrate;
- a second photoelectric conversion portion disposed above the semiconductor substrate;
- a color filter disposed above the semiconductor substrate and disposed below at least one of the first photoelectric conversion portion and the second photoelectric conversion portion,
- wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion;
- and
- a light shield,
- wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
A light detecting apparatus, comprising:
- a lens;
- and
- a light detecting device, comprising:
- a first photoelectric conversion portion disposed above a semiconductor substrate;
- a second photoelectric conversion portion disposed above the semiconductor substrate;
- a color filter disposed above the semiconductor substrate and disposed below at least one of the first photoelectric conversion portion and the second photoelectric conversion portion,
- wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion;
- and
- a light shield,
- wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
Dependencies are inferred from the claim text.