Switch linearization with asymmetrical anti-series varactor pair
AssigneeSkyworks Solutions, Inc.
InventorsYu Zhu, Oleksiy Klimashov, Paul T DiCarlo
Life of this patent
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Abstract
Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.
Claims20
A radio-frequency switch comprising:
- a series arm coupled between an input node and an output node;
- a shunt arm having a set of field-effect transistors, the shunt arm coupled between the series arm and a reference node;
- and
- a varactor stack comprising an asymmetric anti-series varactor pair, the varactor stack coupled in parallel to the shunt arm between the series arm and the reference potential node, the varactor stack configured to simultaneously reduce second order distortions and third order distortions generated by the set of field-effect transistors in the shunt arm.
A radio-frequency switch module comprising:
- a packaging substrate configured to receive a plurality of components;
- a semiconductor die mounted on the packaging substrate, the semiconductor die including a switch that includes a series arm coupled between an input node and an output node;
- the switch including a shunt arm having a set of field-effect transistors, the shunt arm coupled between the series arm and a reference node;
- and the switch including a varactor stack comprising an asymmetric anti-series varactor pair, the varactor stack coupled in parallel to the shunt arm between the series arm and the reference potential node, the varactor stack configured to simultaneously reduce second order distortions and third order distortions generated by the set of field-effect transistors in the shunt arm.
A wireless device comprising:
- a transceiver configured to process radio-frequency (RF) signals;
- an antenna in communication with the transceiver configured to facilitate transmission of an amplified RF signal;
- a power amplifier connected to the transceiver and configured to generate the amplified RF signal;
- and
- a switch connected to the antenna and the power amplifier and configured to selectively route the amplified RF signal to the antenna, the switch including a series arm coupled between an input node and an output node;
- the switch including a shunt arm having a set of field-effect transistors, the shunt arm coupled between the series arm and a reference node;
- and the switch including a varactor stack comprising an asymmetric anti-series varactor pair, the varactor stack coupled in parallel to the shunt arm between the series arm and the reference potential node, the varactor stack configured to simultaneously reduce second order distortions and third order distortions generated by the set of field-effect transistors in the shunt arm.
Dependencies are inferred from the claim text.