Back to results
US 11,641,003 B2Granted
Methods of fabricating planar infrared photodetectors
AssigneeNorthwestern University
InventorManijeh Razeghi
Life of this patent
Estimating the term…
Abstract
Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.
Claims14
A method for fabricating a planar photodetector, the method comprising:
- removing a portion of a protection layer formed on a surface of a semiconductor heterostructure, the semiconductor heterostructure comprising an n-type or a p-type top contact layer, a barrier layer under the top contact layer, and an absorber layer under the barrier layer, wherein the top contact layer, the barrier layer, and the absorber layer are each a type II superlattice, to define an implantation window in the protection layer through which a portion of the surface of the semiconductor heterostructure is exposed;
- and
- exposing the portion of the surface of the semiconductor heterostructure to a flux of ions using ion implantation at an implantation energy and an implantation dose sufficient to damage each type II superlattice and remove charge carriers therefrom, thereby forming an isolation region surrounding an unexposed portion of the semiconductor heterostructure.
Dependencies are inferred from the claim text.