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US 11,641,000 B2Granted
Image sensor and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsZhaoyao Zhan, Qianwei Ding, Xiaohong Jiang, Ching Hwa Tey
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Abstract
The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.
Claims20
An image sensor, comprising:
- a substrate;
- a first circuit layer on the substrate;
- at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material;
- and
- a precursor layer located under the lower material layer, wherein the precursor layer comprises the same metal as the lower material layer.
2 more elements
A method for forming an image sensor, comprising:
- providing a substrate;
- forming a first circuit layer on the substrate;
- forming at least one nanowire photodiode on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction is formed between the lower material layer and the upper material layer, wherein the lower material layer comprises perovskite material;
- and
- forming a precursor layer located under the lower material layer, wherein the precursor layer comprises the same metal as the lower material layer.
2 more elements
Dependencies are inferred from the claim text.