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US 11,640,997 B2Granted
Buried Zener design
AssigneeNXP B.V.
InventorsSaumitra Raj Mehrotra, Kejun Xia
Life of this patent
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Abstract
A method for manufacturing a Zener diode includes implanting an N-type Buried Layer (NBL) with an N-type dopant in a first epitaxial layer, wherein the NBL comprises an NBL opening excluding the N-type dopant. A P-type Buried Layer (PBL) having a peak PBL doping concentration below the NBL is implanted. A second epitaxial layer is grown over the NBL. A P-type region (Plink) is implanted to couple to the PBL above the NBL opening, and to couple the Plink to an Anode electrode. An N-type region (Nlink) is implanted to couple the NBL to a Cathode electrode.
Claims6
A Zener diode comprising:
- an N-type Buried Layer (NBL) in a first epitaxial layer;
- a P-type Buried Layer (PBL) having a peak PBL doping concentration below the NBL;
- a second epitaxial layer over the NBL;
- a P-type region (Plink) coupled to the PBL and to an Anode electrode;
- and
- an N-type region (Nlink) coupled to the NBL and to a Cathode electrode;
- wherein the Plink couples to the PBL through the second epitaxial layer, wherein the second epitaxial layer comprises a P-type dopant having a lower first dopant concentration than a second dopant concentration of the Plink.
4 more elements
Dependencies are inferred from the claim text.