Trench isolation for advanced integrated circuit structure fabrication

A method of fabricating an integrated circuit structure, the method comprising:

• forming a first fin comprising silicon, the first fin having a lower fin portion and an upper fin portion;
• forming a second fin comprising silicon, the second fin having a lower fin portion and an upper fin portion;
• and
• forming a trench isolation structure between the first fin and the second fin, wherein forming the trench isolation structure comprises:
• forming a first insulating layer directly on sidewalls of the lower fin portion of the first fin and directly on sidewalls of the lower fin portion of the second fin, wherein the first insulating layer is a non-doped insulating layer comprising silicon and oxygen;
• forming a second insulating layer directly on the first insulating layer, the second insulating layer comprising silicon and nitrogen;
• and
• forming a dielectric fill material directly laterally adjacent to the second insulating layer, wherein the trench isolation structure has a concave uppermost surface extending from the first fin to the second fin, the concave uppermost surface and including the first insulating layer, the second insulating layer and the dielectric fill material.

A method of fabricating a computing device, the method comprising:

• providing a board;
• and
• coupling a component to the board, the component including an integrated circuit structure, comprising:
• a first fin comprising silicon, the first fin having a lower fin portion and an upper fin portion;
• a second fin comprising silicon, the second fin having a lower fin portion and an upper fin portion;
• a trench isolation structure between the first fin and the second fin, the trench isolation structure comprising:
• a first insulating layer directly on sidewalls of the lower fin portion of the first fin and directly on sidewalls of the lower fin portion of the second fin, wherein the first insulating layer is a non-doped insulating layer comprising silicon and oxygen;
• a second insulating layer directly on the first insulating layer, the second insulating layer comprising silicon and nitrogen;
• and
• a dielectric fill material directly laterally adjacent to the second insulating layer, wherein the trench isolation structure has a concave uppermost surface extending from the first fin to the second fin, the concave uppermost surface and including the first insulating layer, the second insulating layer and the dielectric fill material.