Low-k feature formation processes and structures formed thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
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Abstract
Embodiments of the present disclosure relate to a method of forming a low-k dielectric material, for example, a low-k gate spacer layer in a FinFET device. The low-k dielectric material may be formed using a precursor having a general chemical structure comprising at least one carbon atom bonded between two silicon atoms. A target k-value of the dielectric material may be achieved by controlling carbon concentration in the dielectric material.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a gate structure over a semiconductor fin;
- depositing a low-k spacer material over the gate structure, wherein the depositing the low-k spacer material comprises:
- introducing a first carbon-containing precursor at a first flow rate;
- after the introducing the first carbon-containing precursor at the first flow rate, introducing an oxidizing precursor at a second flow rate;
- and
- after the introducing the oxidizing precursor at the second flow rate, introducing the first carbon-containing precursor at a third flow rate different from the first flow rate;
- and
- etching the low-k spacer material to form a spacer, the spacer having a density of between 1.0 g/cm3 to 3.0 g/cm3.
A method comprising:
- forming a dummy gate electrode over a semiconductor material, the semiconductor material comprising multiple channel regions;
- depositing a low-k material adjacent to the dummy gate electrode, the depositing the low-k material comprising:
- pulsing a silicon-carbon precursor over the dummy gate electrode a first time;
- after the pulsing the silicon-carbon precursor the first time, pulsing an oxidizing precursor over the dummy gate electrode a first time;
- and
- after the pulsing the oxidizing precursor over the dummy gate electrode the first time, pulsing the silicon-carbon precursor over the dummy gate electrode a second time, wherein the pulsing the silicon-carbon precursor over the dummy gate electrode the second time is done for a different duration than the pulsing the silicon-carbon precursor over the dummy gate electrode the first time, wherein after the pulsing the silicon-carbon precursor the second time the low-k material has a carbon concentration in a range from greater than 0 atomic percent (at. %) to 30 at. % and a nitrogen concentration less than about 3 at. %;
- and
- patterning the low-k material into a first spacer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a dummy gate electrode over a semiconductor fin over a substrate;
- and
- forming a spacer located adjacent to the dummy gate electrode, wherein at least a portion of the spacer has a density of between about 1 g/cm3 and 3 g/cm3, a non-zero carbon concentration less than about 30 at. % and a non-zero nitrogen concentration of less than about 3 at. %.
Dependencies are inferred from the claim text.