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US 11,640,977 B2Granted
Non-conformal oxide liner and manufacturing methods thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Ho Lin, Chun-Heng Chen, Xiong-Fei Yu, Chi On Chui
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Abstract
A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.
Claims13
A method comprising:
- forming a fin protruding over a substrate;
- forming a conformal oxide layer over an upper surface and along sidewalls of the fin;
- forming a non-conformal oxide layer over the upper surface and along the sidewalls of the fin, wherein forming the non-conformal oxide layer comprises performing an anisotropic oxide deposition process, wherein the anisotropic oxide deposition process is a plasma process, wherein the plasma process is performed using a precursor comprising silicon and using a gas source comprising an oxygen gas, wherein a first portion of the conformal oxide layer along the sidewalls of the fin physically contacts a second portion of the non-conformal oxide layer along the sidewalls of the fin;
- and
- forming a gate electrode over the fin, wherein the conformal oxide layer and the non-conformal oxide layer are between the fin and the gate electrode.
2 more elements
A method comprising:
- forming a fin protruding over a substrate;
- forming a conformal oxide layer over an upper surface and along sidewalls of the fin;
- forming a non-conformal oxide layer over the upper surface and along the sidewalls of the fin, wherein forming the non-conformal oxide layer comprises performing an anisotropic plasma treatment, wherein the anisotropic plasma treatment converts an exterior portion of the fin into the non-conformal oxide layer, wherein a first portion of the conformal oxide layer along the sidewalls of the fin physically contacts a second portion of the non-conformal oxide layer along the sidewalls of the fin;
- and
- forming a gate electrode over the fin, wherein the conformal oxide layer and the non-conformal oxide layer are between the fin and the gate electrode.
2 more elements
A method comprising:
- forming a fin;
- forming isolation regions on opposing sides of the fin;
- forming a first oxide layer over a top surface and along sidewalls of the fin, wherein the first oxide layer is non-conformal and extends from the top surface of the fin to the isolation regions, wherein the first oxide layer has different thicknesses over the top surface of the fin and along the sidewalls of the fin, wherein the first oxide layer has a first thickness over the top surface of the fin, and has a second thickness along the sidewalls of the fin, wherein the first thickness is greater than the second thickness, wherein forming the first oxide layer comprises performing an anisotropic plasma-enhanced atomic layer deposition (PEALD) process, wherein the anisotropic PEALD process comprises a plurality of cycles and is performed using a precursor comprising silicon and using a gas source comprising an oxygen gas;
- and
- forming a second oxide layer over the top surface and along the sidewalls of the fin, wherein the second oxide layer is conformal, wherein the second oxide layer comprises a first portion that extends along the sidewalls of the fin, wherein the first portion of the second oxide layer is in contact with the first oxide layer.
2 more elements
A method comprising:
- forming a fin protruding above a substrate;
- forming a non-conformal gate dielectric layer and a conformal oxide layer over a top surface of the fin and along sidewalls of the fin, wherein forming the non-conformal gate dielectric layer comprises performing an anisotropic plasma-enhanced atomic layer deposition (PEALD) process, wherein the anisotropic PEALD process comprises a plurality of cycles and is performed using a precursor comprising silicon and using a gas source comprising an oxygen gas, wherein the non-conformal gate dielectric layer has a first thickness over the top surface of the fin and has a second thickness along the sidewalls of the fin, the first thickness being different from the second thickness;
- and
- forming a gate electrode over the fin and over the non-conformal gate dielectric layer.
1 more element
Dependencies are inferred from the claim text.