Semiconductor memory device having a channel layer
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A semiconductor device includes a stacked structure with first conductive layers and insulating layers that are stacked alternately with each other, second conductive layers located on the stacked structure, first openings passing through the second conductive layers and the stacked structure and having a first width, second conductive patterns formed in the first openings and located on the stacked structure to be electrically coupled to the second conductive layers, data storage patterns formed in the first openings and located under the second conductive patterns, and channel layers formed in the data storage patterns and the second conductive patterns.
Claims16
A semiconductor device, comprising:
- a stacked structure with first conductive layers and insulating layers that are stacked alternately with each other;
- second conductive layers located over the stacked structure;
- channel layers passing through the second conductive layers and the stacked structure;
- second conductive patterns located over the stacked structure to be electrically coupled to the second conductive layers and interposed between the channel layers and the second conductive layers;
- and
- data storage patterns located under the second conductive patterns and interposed between the channel layers and the stacked structure.
A semiconductor device, comprising:
- a stacked structure including word lines and insulating layers stacked alternately with each other;
- select lines located over the stacked structure;
- an isolation insulating pattern located over the stacked structure and insulating the select lines from each other;
- channel layers passing through the stacked structure and each of the select lines;
- and
- data storage patterns located under the select lines and interposed between the channel layers and the stacked structure,
- wherein the data storage patterns protrude farther in a direction away from the channel layers than the select lines.
Dependencies are inferred from the claim text.