Back to results
US 11,640,975 B2Granted
Silicided collector structure
AssigneeNXP USA, Inc.
InventorsJay Paul John, James Albert Kirchgessner, Ljubo Radic
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an emitter, a base, and a collector. A portion of the collector is located below a trench in a substrate. A collector silicide is located on at least a portion of a bottom portion of the trench and on at least a portion of a sidewall of the trench. The collector silicide structure is electrically coupled to a collector contact structure.
Claims17
A semiconductor device comprising:
- a substrate defining a trench, the trench including a sidewall and a bottom portion;
- an emitter;
- a base;
- a collector, the collector including a portion located directly below the bottom portion of the trench and along the sidewall of the trench;
- a collector contact structure;
- a collector silicide structure including a first portion located on at least a portion of the bottom portion of the trench and a second portion located on at least a portion of the sidewall of the trench, the collector silicide structure being electrically coupled to the collector contact structure;
- wherein the collector silicide structure is not located directly over a second portion of the bottom portion of the trench.
4 more elements
A semiconductor device comprising:
- a substrate defining a trench, the trench including a sidewall and a bottom portion;
- an emitter;
- a base;
- a collector, the collector including a portion located directly below the bottom portion of the trench and along the sidewall of the trench;
- a collector contact structure;
- a collector silicide structure including a first portion located on at least a portion of the bottom portion of the trench and a second portion located on at least a portion of the sidewall of the trench, the collector silicide structure being electrically coupled to the collector contact structure;
- wherein the collector silicide structure is in electrical contact with a plurality of regions of the collector where each region of the plurality of regions has a different net conductivity doping concentration of a first type.
4 more elements
Dependencies are inferred from the claim text.