Thin-film light-emitting device including charge generating junction layer and method of fabricating thin-film light-emitting device

A method of fabricating a thin-film light-emitting device, comprising:

• a step of forming a negative electrode on a substrate;
• a step of forming at least one light-emitting unit on the negative electrode;
• and
• a step of forming a positive electrode on the light-emitting unit,
• wherein the step of forming the light-emitting unit comprises a step of forming a charge generating junction layer on the negative electrode;
• a step of forming an electron injection/transport layer on the charge generating junction layer;
• a step of forming a thin-film light-emitting layer on the electron injection/transport layer;
• and
• a step of forming a hole injection/transport layer on the thin-film light-emitting layer,
• wherein the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and a concentration of oxygen vacancies at an interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer,
• wherein the annealing treatment increases a proportion of the p-type semiconductor layer at the interface between the p-type and n-type semiconductor layers.