US 11,638,378 B2Granted

Method of fabricating semicondoctor device

AssigneeWinbond Electronics Corp.

InventorsChe-Fu Chuang, Hsiu-Han Liao

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method for fabricating a semiconductor device includes: forming a first gate dielectric layer in a first and a second regions of a peripheral region of a substrate; forming a first conductive layer and a first hard mask layer over the substrate; forming a first mask layer on the first hard mask layer in the first region; removing the first hard mask layer outside the first region; removing the first hard mask layer; performing a wet etch process by taking the first hard mask layer as a mask, and removing the first conductive layer and the first gate dielectric layer outside the first region; removing the first hard mask layer and the first conductive layer; forming a second gate dielectric layer in the second region; and forming a first and a second gate conductive layers in the first and the second regions respectively.

Claims14

Dependent claims

A fabricating method of a semiconductor device comprising:

providing a substrate comprising a cell region and a peripheral region, wherein the peripheral region comprises a first region and a second region;
forming a tunnel oxide, a floating conductive layer, and a stacked hard mask layer in the cell region and the peripheral region;
taking the stacked hard mask layer as a mask and removing the floating conductive layer and the tunnel oxide in the first region and the second region;
forming a first gate dielectric layer over the substrate of the first region and the second region of the peripheral region, and forming a first conductive layer and a first hard mask layer in the first region and the second region of the cell region and the peripheral region;
removing the first hard mask layer outside the first region;
taking the first hard mask layer as a mask and removing the first conductive layer and the first gate dielectric layer outside the first region;
removing the first hard mask layer and the first conductive layer;
and
forming a first gate conductive layer in the first region.

6 more elements

A fabricating method of a semiconductor device comprising:

providing a substrate comprising a cell region and a peripheral region, wherein the peripheral region comprises a first region and a second region;
forming a first gate dielectric layer over the substrate of the first region and the second region of the peripheral region, and forming a first conductive layer and a first hard mask layer in the first region and the second region of the cell region and the peripheral region;
forming a first mask layer on the first hard mask layer in the first region;
taking the first mask layer as a mask and removing the first hard mask layer outside the first region;
removing the first mask layer;
taking the first hard mask layer as a mask and performing a wet etch process to remove the first conductive layer and the first gate dielectric layer outside the first region;
removing the first hard mask layer and the first conductive layer;
forming a first gate dielectric layer in the second region;
and
forming a first gate conductive layer in the first region, and forming a second gate conductive layer in the second region.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/317,872Filed 11 May 2021
Published: US 2022/0367496 A117 Nov 2022
Granted: 25 Apr 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10B 41/40
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the peripheral circuit region
H10D 64/035
Of data-storage electrodes: comprising conductor-insulator-conductor-insulator-semiconductor structures
H10B 41/49
Simultaneous manufacture of periphery and memory cells: comprising different types of peripheral transistor
H10P 50/283
Of inorganic materials: by chemical means