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US 11,638,374 B2Granted
Multicolor approach to DRAM STI active cut patterning
AssigneeApplied Materials, Inc.
InventorsTejinder Singh, Takehito Koshizawa, Abhijit Basu Mallick, Pramit Manna, Nancy Fung, Eswaranand Venkatasubramanian, Ho-yung David Hwang, Samuel E. Gottheim
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Abstract
Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.
Claims10
A processing tool for forming a semiconductor device, the processing tool comprising:
- a central transfer station having a plurality of processing chambers disposed around the central transfer station;
- a robot within the central transfer station configured to move a substrate between the plurality of processing chambers;
- a first processing chamber connected to the central transfer station, the first processing chamber configured to perform etch process;
- a second processing chamber connected to the central transfer station, the second processing chamber configured to perform deposition processes;
- and
- a controller connected to one or more of the central transfer station, the robot, the first processing chamber, and the second processing chamber, the controller having one or more configurations selected from a first configuration to move a substrate on the robot between the plurality of processing chambers, a second configuration to perform a conformal gapfill process in one or more of the processing chambers, a third configuration to perform one or more etch processes, a fourth configuration to perform a chemical-mechanical planarization process, and a fifth configuration to perform a lithography process.
3 more elements
Dependencies are inferred from the claim text.