Heterostructure and method of fabrication
AssigneeSoitec
InventorsArnaud Castex, Daniel Delprat, Bernard Aspar, Ionut Radu
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Abstract
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
Claims23
A substrate for use in fabricating an acoustic wave device, comprising:
- a support substrate;
- a charge trapping layer on a surface of the support substrate;
- and
- a piezoelectric material bonded over the charge trapping layer on a side thereof opposite the support substrate along a bonding interface;
- and
- a layer of adhesive material between the piezoelectric material and the charge trapping layer;
- wherein the bonding interface is located between the piezoelectric material and the charge trapping layer.
A substrate for use in fabricating an acoustic wave device, comprising:
- a support substrate;
- a charge trapping layer on a surface of the support substrate;
- and
- a piezoelectric material bonded over the charge trapping layer on a side thereof opposite the support substrate along a bonding interface;
- wherein the bonding interface is located between the piezoelectric material and the charge trapping layer;
- and
- wherein the charge trapping layer has a thickness below 1 μm.
A substrate for use in fabricating an acoustic wave device, comprising:
- a support substrate comprising at least one material selected from among the group consisting of:
- Si, Ge, GaAs, InP, SiGe, and sapphire;
- a porous and/or polycrystalline trap-rich layer on a surface of the support substrate;
- a piezoelectric material bonded over the porous and/or polycrystalline trap-rich layer on a side thereof opposite the support substrate, the piezoelectric material comprising at least one material selected from among the group consisting of:
- Lithium Tantalate (LTO), Lithium Niobate (LNO), Aluminum Nitride (AlN), and Zinc Oxide (ZnO);
- and
- a layer of adhesive material between the piezoelectric material and the porous and/or polycrystalline trap-rich layer.
Dependencies are inferred from the claim text.