High yield RRAM cell with optimized film scheme
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTrinh Hai Dang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chin-Chieh Yang, Yu-Wen Liao, Wen-Ting Chu, Chia-Shiung Tsai
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Abstract
The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode over a substrate. A data storage layer is over the bottom electrode and has a first thickness. A capping layer is over the data storage layer. The capping layer has a second thickness that is in a range of between approximately 1.9 and approximately 3 times thicker than the first thickness. A top electrode is over the capping layer.
Claims20
A resistive random access memory (RRAM) cell, comprising:
- a bottom electrode over a substrate;
- a data storage layer over the bottom electrode and having a first thickness;
- a capping layer arranged entirely over the data storage layer, wherein the capping layer is configured to store oxygen and has a second thickness that is in a range of between 1.9 and 3 times thicker than the first thickness;
- a top electrode completely covering an upper surface of the capping layer that faces away from the substrate, wherein the top electrode and the upper surface of the capping layer continuously extend over a same maximum width;
- and
- an upper interconnect contacting the top electrode, wherein an upper surface of the top electrode extends past an outermost edge of the upper interconnect.
A resistive random access memory (RRAM) cell, comprising:
- a bottom electrode comprising a lower layer and an upper layer over the lower layer, wherein the lower layer completely covers a lower surface of the upper layer and wherein the lower layer has a greater thickness than the upper layer;
- a data storage layer in direct contact with the upper layer;
- a capping layer arranged over the data storage layer and configured to store oxygen, wherein the capping layer has a greater thickness than the data storage layer;
- a top electrode over the data storage layer, wherein the capping layer has a top surface that continuously extends over a same maximum width as a bottom surface of the top electrode;
- and
- wherein the bottom electrode has an oxygen content that decreases from an interface between the bottom electrode and the data storage layer to within the bottom electrode.
A resistive random access memory (RRAM) cell, comprising:
- a bottom electrode disposed over a substrate and comprising a lower layer and an upper layer physically contacting the lower layer, wherein the lower layer completely covers a bottom of the upper layer and the upper layer completely covers a top of the lower layer, the upper layer being a same material as the lower layer and having a smaller thickness than the lower layer;
- a data storage layer physically contacting the upper layer of the bottom electrode;
- a capping layer arranged over the data storage layer and configured to store oxygen;
- a top electrode over the capping layer, wherein the top electrode and the capping layer continuously extend over a same maximum width and wherein the top electrode is completely separated from the data storage layer by the capping layer;
- and
- wherein the capping layer is in a range of between approximately 2.2 and approximately 2.8 times thicker than the data storage layer.
Dependencies are inferred from the claim text.