Spin-orbit torque magnetoresistance effect element and magnetic memory

A spin-orbit torque magnetoresistance effect element comprising:

• an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer;
• a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, the spin-orbit torque wiring including:
• a semiconductor;
• and
• a first surface which faces the element part and a second surface opposite to the first surface;
• a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, the first conductive part and the second conductive part facing the first surface or the second surface;
• and
• a gate part positioned between the first conductive part and the second conductive part when viewed from the first direction, the gate part facing the second surface and including, in order from a position near the spin-orbit torque wiring:
• a gate insulating layer that covers at least a part of the second surface of the spin-orbit torque wiring and covers both a part of the first conductive part and a part of the second conductive part;
• and
• a gate electrode, the gate insulating layer occupying a larger area than the gate electrode when viewed from the first direction.