In-plane spin orbit torque magnetoresistive stack/structure and methods therefor

A magnetoresistive memory, comprising:

• a plurality of magnetoresistive devices, wherein each magnetoresistive device includes a magnetically fixed region, a magnetically free region, an intermediate region positioned between the magnetically fixed region and the magnetically free region, encapsulation layers formed on opposing side walls of the magnetically free region, a top electrode positioned above the magnetically fixed region, and a diode positioned between the magnetically fixed region and the top electrode, wherein the encapsulation layers are formed vertically over opposing ends of the top electrode, wherein the intermediate region and each of the encapsulation layers include magnesium oxide (MgO);
• and
• a first conductor extending adjacent each magnetoresistive device of the plurality of magnetoresistive devices,
• wherein the first conductor is in electrical contact with the magnetically free region of each magnetoresistive device, wherein the encapsulation layers are substantially vertical relative to a plane of the first conductor and terminate at an interface between the first conductor and the magnetically free region of each magnetoresistive device, and wherein the magnetically free region and the encapsulation layers produce an interfacial magnetic anisotropy perpendicular to an interface between the magnetically free region and the encapsulation layers, the interfacial magnetic anisotropy and an easy axis of magnetization of the magnetically free region being approximately in a same direction.

A magnetoresistive memory, comprising:

• a plurality of magnetoresistive devices, wherein each magnetoresistive device includes a magnetically fixed region, a magnetically free region, an intermediate region positioned between the magnetically fixed region and the magnetically free region, encapsulation layers formed on opposing side walls of the magnetically free region, a top electrode positioned above the magnetically fixed region, and a diode positioned between the magnetically fixed region and the top electrode, wherein the encapsulation layers are formed vertically over opposing ends of the top electrode, wherein the intermediate region and each of the encapsulation layers include a same dielectric material;
• and
• a first conductor extending adjacent each magnetoresistive device of the plurality of magnetoresistive devices,
• wherein the first conductor is in electrical contact with the magnetically free region of each magnetoresistive device, and wherein the encapsulation layers extend past an interface of a magnetoresistive device and the first conductor.

A magnetoresistive memory, comprising:

• a plurality of magnetoresistive devices, wherein each magnetoresistive device includes a magnetically fixed region, a magnetically free region, an intermediate region positioned between the magnetically fixed region and the magnetically free region, encapsulation layers formed on opposing side walls of the magnetically free region, a top electrode positioned above the magnetically fixed region, and a diode positioned between the magnetically fixed region and the top electrode, wherein the encapsulation layers are formed vertically over opposing ends of the top electrode, wherein the intermediate region and each of the encapsulation layers include a same dielectric material;
• and
• a first conductor extending adjacent each magnetoresistive device of the plurality of magnetoresistive devices,
• wherein the first conductor is in electrical contact with the magnetically free region of each magnetoresistive device, wherein the encapsulation layers are substantially vertical relative to a plane of the first conductor and terminate at an interface between the first conductor and the magnetically free region of each magnetoresistive device, and wherein the magnetically free region and the encapsulation layers produce an interfacial magnetic anisotropy perpendicular to an interface between the magnetically free region and the encapsulation layers, the interfacial magnetic anisotropy and an easy axis of magnetization of the magnetically free region being approximately in a same direction.

A magnetoresistive memory, comprising:

• a plurality of magnetoresistive devices, wherein each magnetoresistive device includes a magnetically fixed region, a magnetically free region, an intermediate region positioned between the magnetically fixed region and the magnetically free region, encapsulation layers formed on opposing side walls of the magnetically free region, a top electrode positioned above the magnetically fixed region, and a diode positioned between the magnetically fixed region and the top electrode, wherein the encapsulation layers are formed vertically over opposing ends of the top electrode, wherein the intermediate region and each of the encapsulation layers include a same dielectric material;
• and
• a first conductor extending adjacent each magnetoresistive device of the plurality of magnetoresistive devices,
• wherein the first conductor is in electrical contact with the magnetically free region of each magnetoresistive device, wherein the encapsulation layers are substantially vertical to a plane of the first conductor and terminate at an interface between the first conductor and the magnetically free region of each magnetoresistive device, wherein a constantly-regulated current flows through the first conductor for write operations, and wherein the magnetically free region and the encapsulation layers produce an interfacial magnetic anisotropy perpendicular to an interface between the magnetically free region and the encapsulation layers, the interfacial magnetic anisotropy and an easy axis of magnetization of the magnetically free region being approximately in a same direction.