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US 11,637,234 B2Granted
Manufacturing method for multilayer structure of magnetic body and BiSb layer, magnetoresistive memory, and pure spin injection source
AssigneeTokyo Institute of Technology
InventorsNam Hai Pham, Huynh Duy Khang Nguyen
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Abstract
A magnetoresistive memory cell includes an MTJ element including a magnetization free layer and a pure spin injection source. The pure spin injection source includes a BiSb layer coupled to the magnetization free layer. By flowing an in-plane current through the BiSb layer, this arrangement is capable of providing magnetization reversal of the magnetization free layer.
Claims9
Magnetoresistive memory comprising:
- an MTJ (magnetic tunnel junction) element comprising a magnetization free layer;
- and
- a pure spin injection source comprising a BiSb layer structured as a topological insulator having a spin Hall angle larger than 0.5 and a conductivity on the order of 105 Ω−1m−1 due to a topological surface state, which is coupled to the magnetization free layer via an interface,
- wherein the interface is provided such that it is orthogonal to the direction of crystal growth of the BiSb layer,
- and wherein the magnetoresistive memory is structured to flow an in-plane current through the BiSb layer so as to supply a pure spin current to the magnetization free layer in a direction that is perpendicular to the interface, thereby providing magnetization reversal of the magnetization free layer.
2 more elements
A manufacturing method for magnetoresistive memory, comprising:
- forming a magnetization free layer;
- and
- forming a pure spin injection source comprising a BiSb layer,
- wherein the BiSb layer has a (012) orientation.
1 more element
A pure spin injection source structured to inject a pure spin current to a magnetic body,
- wherein the pure spin injection source comprises a BiSb layer structured as a topological insulator having a spin Hall angle larger than 0.5 and a conductivity on the order of 105 Ω−1m−1 due to a topological surface state, which is coupled to the magnetic body via an interface,
- wherein the interface is provided such that it is orthogonal to the direction of crystal growth of the BiSb layer,
- and wherein a pure spin current is supplied to the magnetic body in a direction that is perpendicular to the interface according to an in-plane current that flows through the BiSb layer.
Magnetoresistive memory comprising:
- an MTJ (magnetic tunnel junction) element comprising a magnetization free layer;
- and
- a pure spin injection source comprising a BiSb layer coupled to the magnetization free layer,
- wherein a lower layer having a cubic crystal structure is employed so as to provide the BiSb layer with a (012) orientation.
1 more element
Dependencies are inferred from the claim text.