Semiconductor device including multiple distributed bragg reflector layers

A semiconductor device, comprising:

• first and second light emitting structures disposed in a first region;
• and
• a dummy structure disposed in a second region that is around the first region in a closed loop shape to surround the first region and be spaced apart from the first and second light emitting structures, when viewed in an optical axis direction of light emitted from the first and second light emitting structures,
• wherein the first light emitting structure comprises a first DBR layer of a first conductivity type, a second DBR layer of a second conductivity type, and a first active layer disposed between the first DBR layer and the second DBR layer,
• wherein the second light emitting structure comprises a third DBR layer of the first conductivity type, a fourth DBR layer of the second conductivity type, and a second active layer disposed between the third DBR layer and the fourth DBR layer,
• wherein the dummy structure comprises a first conductivity type DBR layer, and a second conductivity type DBR layer,
• wherein the first DBR layer, the third DBR layer, and the first conductivity type DBR layer are disposed to overlap with each other in a direction perpendicular to the optical axis direction,
• wherein the first conductivity type DBR layer of the dummy structure and the second conductivity type DBR layer of the dummy structure are electrically connected in common,
• wherein a first electrode is electrically connected with the first DBR layer, the third DBR layer, and the first conductivity type DBR layer,
• wherein a second electrode is electrically connected with the second DBR layer and the fourth DBR layer,
• wherein the first electrode is disposed in direct contact with an upper surface of the first DBR layer and an upper surface of the third DBR layer, and
• wherein the second electrode is electrically insulated from the second conductivity type DBR layer of the dummy structure.