Light emitting diode device

A light emitting diode (LED) device, comprising:

• an epitaxial layered structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer sequentially disposed in such order;
• a current spreading layer formed on a surface of said second-type semiconductor layer opposite to said active layer;
• a first insulating layer formed over said current spreading layer and formed with at least one first through hole to expose a portion of said current spreading layer;
• and
• a reflective structure formed on said first insulating layer, extending into said at least one first through hole, and contacting with said current spreading layer,
• wherein said current spreading layer is formed with at least one opening structure to expose a portion of said surface of said second-type semiconductor layer opposite to said active layer, and said opening structure is arranged in a staggered arrangement with said first through hole,
• wherein said first insulating layer is further formed on said surface of said second-type semiconductor layer, and is further formed with at least one second through hole to expose a portion of said surface of said second-type semiconductor layer, said reflective structure extending into said second through hole, and contacting with said surface of said second-type semiconductor layer,
• wherein said epitaxial layered structure is formed with at least one recess that extends through said second-type semiconductor layer and said active layer, and that terminates at said first-type semiconductor layer to expose said first-type semiconductor layer, and
• wherein said second through hole corresponds in position to and surrounds said at least one recess and has a diameter larger than that of said at least one recess.