Semiconductor light-emitting element

A semiconductor light-emitting element comprising, in this order:

• a support substrate;
• a metal bonding layer
• a reflective layer;
• a first conductivity type cladding layer made of InGaAsP containing at least In and P;
• a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm;
• and
• a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
• a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern,
• wherein the surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face and an emission spectrum of the semiconductor light-emitting element has a single peak.

A semiconductor light-emitting element comprising, in this order:

• a substrate;
• a reflective layer;
• a first conductivity type cladding layer made of InGaAsP containing at least In and P;
• a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm;
• and
• a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
• wherein a protective film is provided on a surface of a light extraction face of the second conductivity type cladding layer,
• and the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more and an emission spectrum of the semiconductor light-emitting element has a single peak.

A semiconductor light-emitting element comprising, in this order:

• a support substrate;
• a metal bonding layer
• a reflective layer;
• a first conductivity type cladding layer made of InGaAsP containing at least In and P;
• a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm;
• and
• a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
• wherein a protective film is provided on a surface of a light extraction face of the second conductivity type cladding layer,
• and the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more and an emission spectrum of the semiconductor light-emitting element has a single peak.